Insulator photocurrents: application to dose rate hardening of CMOS/SOI integrated circuits

Author

Nivet, E. Dupont ; Coic, Y.M. ; Flament, O. ; Tinel, F.

Author_Institution

CEA, Centre d´´Etudes de Bruyeres-le-Chatel, France

fYear

1997

fDate

15-19 Sep 1997

Firstpage

133

Lastpage

140

Abstract

Irradiation of insulators with a pulse of high energy X-rays can induce photocurrents in the interconnections of integrated circuits. We present, here, a new method to measure and analyse this effect together with a simple model. We also demonstrate that these insulator photocurrents have to be taken into account to obtain high levels of dose-rate hardness with CMOS on SOI integrated circuits, especially flip-flops or memory blocks of ASICs. We show that it explains some of the upsets observed in a SRAM embedded in an ASIC

Keywords

CMOS integrated circuits; SRAM chips; X-ray effects; application specific integrated circuits; flip-flops; integrated circuit interconnections; integrated circuit measurement; photoconductivity; radiation hardening (electronics); silicon-on-insulator; ASIC; CMOS/SOI integrated circuit; SRAM; dose rate hardening; embedded memory; flip-flop; high energy X-ray pulse irradiation; insulator photocurrent; interconnection; CMOS integrated circuits; CMOS memory circuits; Flip-flops; Insulation; Integrated circuit interconnections; Integrated circuit measurements; Photoconductivity; Pulse circuits; Semiconductor device modeling; X-rays;

fLanguage

English

Publisher

ieee

Conference_Titel

Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on

Conference_Location

Cannes

Print_ISBN

0-7803-4071-X

Type

conf

DOI

10.1109/RADECS.1997.698869

Filename

698869