Title :
190-fs semiconductor disk laser and tapered diode amplifier with ultrafast pulse picking
Author :
Klopp, P. ; Griebner, U. ; Zorn, M. ; Klehr, A. ; Liero, A. ; Weyers, M. ; Erbert, G.
Author_Institution :
Max Born Inst., Berlin, Germany
Abstract :
Optically-pumped semiconductor disk lasers (SDLs) promise to be versatile femtosecond sources, because they can be tailored for almost any wavelength. Very recently, by passive mode-locking of SDLs with a semiconductor saturable absorber mirror (SESAM), pulse durations as short as 290 fs and 260 fs were demonstrated in the 1-mum wavelength range. Here, we investigate the laser parameters important for short-pulse performance and present 190-fs pulses from a diode-pumped InGaAs/AlGaAs laser emitting around 1045 nm. By this, we improved the record for semiconductor lasers without external pulse compression. Furthermore, we showed the feasibility of a new tapered diode amplifier with ultrafast electrical pumping for pulse amplification and picking, giving free choice of pulse repetition frequency.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser mirrors; laser mode locking; optical pulse generation; optical pumping; optical saturable absorption; semiconductor lasers; InGaAs-AlGaAs; diode-pumped laser; femtosecond laser source; laser pulse amplification; optically-pumped semiconductor disk laser; passive mode-locking; pulse repetition frequency; semiconductor saturable absorber mirror; short-pulse performance; tapered diode amplifier; time 190 fs; time 260 fs; time 290 fs; ultrafast electrical pumping; ultrafast pulse picking; wavelength 1 mum; wavelength 1045 nm; Laser mode locking; Optical pulse compression; Optical pulses; Pulse amplifiers; Pump lasers; Semiconductor diodes; Semiconductor lasers; Semiconductor optical amplifiers; Stimulated emission; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
Conference_Location :
Munich
Print_ISBN :
978-1-4244-4079-5
Electronic_ISBN :
978-1-4244-4080-1
DOI :
10.1109/CLEOE-EQEC.2009.5192737
