Title :
Investigation of the temperature dependence of the threshold current density of GaInP/AlGaInP double heterostructure lasers
Author :
Hagen, S.H. ; Valster, A. ; Boermans, M.J.B. ; van der Heyden, J. ; Acket, G.
Author_Institution :
Philips Research Laboratories
Keywords :
Diodes; Electrons; Epitaxial growth; Gallium arsenide; Laboratories; Laser theory; Photoluminescence; Substrates; Temperature dependence; Threshold current;
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
DOI :
10.1109/ISLC.1990.764416
