DocumentCode :
2799213
Title :
Room temperature CW operation of all-MOCVD-grown SQW lasers on Si using AlGaAs/AlGaP intermediate layers
Author :
Egawa, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Author_Institution :
Nagoya Institute of Technology
fYear :
1990
fDate :
9-14 Sept. 1990
Firstpage :
180
Lastpage :
181
Keywords :
Coatings; Electrons; Gallium arsenide; MOCVD; Quantum well lasers; Rough surfaces; Surface emitting lasers; Surface morphology; Surface roughness; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
Type :
conf
DOI :
10.1109/ISLC.1990.764480
Filename :
764480
Link To Document :
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