Title :
Room temperature CW operation of all-MOCVD-grown SQW lasers on Si using AlGaAs/AlGaP intermediate layers
Author :
Egawa, T. ; Soga, T. ; Jimbo, T. ; Umeno, M.
Author_Institution :
Nagoya Institute of Technology
Keywords :
Coatings; Electrons; Gallium arsenide; MOCVD; Quantum well lasers; Rough surfaces; Surface emitting lasers; Surface morphology; Surface roughness; Temperature;
Conference_Titel :
Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
Conference_Location :
Davos, Switzerland
DOI :
10.1109/ISLC.1990.764480