• DocumentCode
    2799271
  • Title

    Gain and absorption in InGaAs/InGaAsP and InGaAs/InGaAlAs SCMQW laser structures

  • Author

    Fuchs, G. ; Hoerer, J. ; Hangleiter, A. ; Goldstein, L. ; Glew, R.

  • Author_Institution
    Universitaet Stuttgart
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    188
  • Lastpage
    189
  • Keywords
    Absorption; Charge carrier density; Charge carrier processes; Density measurement; Free electron lasers; Gain measurement; High speed optical techniques; Indium gallium arsenide; Performance gain; Quantum well devices;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764484
  • Filename
    764484
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2799271