• DocumentCode
    2799294
  • Title

    Influence of the P type doping of the InP cladding layer on the threshold current density in 1.5/spl mu/m Q.W. lasers

  • Author

    Sermage, B. ; Blez, M. ; Kazmierski, C. ; Ougazzaden, A. ; Mircea, A. ; Bouley, J.C.

  • Author_Institution
    Centre National D´´Etudes des Telecommunications
  • fYear
    1990
  • fDate
    9-14 Sept. 1990
  • Firstpage
    192
  • Lastpage
    193
  • Keywords
    Absorption; Doping; Electromagnetic waveguides; Indium gallium arsenide; Indium phosphide; Laser theory; Optical scattering; Optical waveguides; Quantum well lasers; Threshold current;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Semiconductor Laser Conference, 1990. Conference Digest. 12th IEEE International
  • Conference_Location
    Davos, Switzerland
  • Type

    conf

  • DOI
    10.1109/ISLC.1990.764486
  • Filename
    764486
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2799294