DocumentCode
2799487
Title
A microwave 2DEG-CCD for high speed signal acquisition
Author
LaRue, R.A. ; Colbeth, R.E. ; Davis, G.A. ; Yuen, C. ; Shih, C. ; Chung, Y. ; Weiss, R.E. ; Rossi, D.V.
Author_Institution
Varian Res. Center, Palo Alto, CA, USA
fYear
1991
fDate
20-23 Oct. 1991
Firstpage
23
Lastpage
26
Abstract
A two-phase, 2DEG-CCD intended for signal acquisition and delay with sample rates in the 1 to 20 GHz range is described. Signal delay versus clock frequency has been measured from 1 MHz to 13 GHz, verifying CCD operation. The input-to-output transfer function is linear for input powers ranging from -25 dBm to +2 dBm, with a 1 dB compression point at 4.5 dBm. The lower bound on CTE is 0.995 at 10 MHz and 4.02 GHz. CTE characterization results for clock frequencies between 4.02 GHz to 16.4 GHz qualitatively agree with those of two-dimensional transient simulations, which show that the charge packet transfers at saturation velocity. Simulations of a device incorporating an InGaAs channel predict that CTE greater than 0.9999 is attainable for clock frequencies up to 50 GHz.<>
Keywords
charge-coupled device circuits; charge-coupled devices; signal processing equipment; solid-state microwave devices; 1 MHz to 50 GHz; InGaAs channel; clock frequency; high speed signal acquisition; microwave 2DEG-CCD; saturation velocity; transfer function; two-phase CCD; Bandwidth; Charge coupled devices; Charge-coupled image sensors; Clocks; Frequency measurement; Gallium arsenide; Indium gallium arsenide; Predictive models; Propagation delay; Transfer functions;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-0196-X
Type
conf
DOI
10.1109/GAAS.1991.172624
Filename
172624
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