Title :
Novel 10 GHz T-FF and D-FF ICs using GaAs MESFET source-input circuits
Author :
Yoshihara, K. ; Umeda, T. ; Inoue, T. ; Ishida, K. ; Kitaura, Y. ; Konno, M.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
An input circuit configuration for very high speed digital ICs which provides good line termination without using a 50-ohm resistor is described. This is realized by featuring a source-input circuit of a common-gate FET. A resistor and capacitor network, attached to an ordinary common-gate FET circuit, can make a remarkable improvement in input resistance constancy and higher frequency gain. The technique of the source-input circuit was applied to SCFL flip-flops. T-FF and D-FF ICs were fabricated with 0.5 mu m WNx-gate BP-LDD GaAs MESFET technology, and tested. They demonstrated excellent high-frequency operations above 10 GHz.<>
Keywords :
Schottky gate field effect transistors; field effect integrated circuits; flip-flops; gallium arsenide; integrated logic circuits; 0.5 micron; 10 GHz; D-type flip-flops; GaAs; MESFET source-input circuits; SCFL flip-flops; T-type flip-flops; WN/sub x/ gate; common-gate FET; high speed digital ICs; high-frequency operations; Capacitors; Distributed parameter circuits; FET circuits; Flip-flops; Frequency; Gallium arsenide; MESFET circuits; Power transmission lines; Resistors; Voltage;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172640
