DocumentCode
280004
Title
GaAs MSI circuit design for communication systems
Author
Haigh, D.G. ; Toumazou, C.
Author_Institution
Dept. of Electr. & Electr. Eng., Univ. Coll., London, UK
fYear
1990
fDate
33003
Firstpage
42491
Lastpage
511
Abstract
Gallium Arsenide (GaAs) technology has been successfully applied to the realisation of switched capacitor (SC) circuits with switching frequencies an order of magnitude above the maximum achieved using CMOS technology. Experimental results which confirm the accurate performance of a second order bandpass filter operating with a 300 MHz switching frequency have been recently achieved. After briefly reviewing these results, this contribution will look forward from this standpoint towards application of the experience gained through that work to meet important emerging requirements in the area of modern broadband monolithic communication systems using high frequency integrated circuit technologies
Keywords
III-V semiconductors; band-pass filters; gallium arsenide; monolithic integrated circuits; switched capacitor filters; 300 MHz; GaAs; MSI circuit design; bandpass filter; broadband monolithic communication systems; communication systems; high frequency integrated circuit technologies; switched capacitor circuits; switching frequencies;
fLanguage
English
Publisher
iet
Conference_Titel
Analogue VLSI, IEE Colloquium on
Conference_Location
London
Type
conf
Filename
190119
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