Title :
A 0.25-watt three-stage Q-band MESFET monolithic power amplifier
Author :
Yang, H. ; Herman, R.M. ; Angel, K.W. ; Chao, A.M. ; Schindler, M.J. ; Adlerstein, M. ; Tajima, Y. ; Danzilio, D.M.
Author_Institution :
Magnavox Gov. & Ind. Electron. Co., Torrance, CA, USA
Abstract :
A monolithic, three-stage, 0.25-W, Q-band MESFET power amplifier has been developed. The FETs of the amplifier use 0.25-micron, e-beam defined gates and MOCVD grown active layers. The amplifier has shown a small-signal gain of from 10-11 dB in the frequency range of 43 to 46 GHz. The RF output power is at least 24 dBm at 3-dB compression.<>
Keywords :
MMIC; field effect integrated circuits; microwave amplifiers; power amplifiers; 0.25 W; 0.25 micron; 10 to 11 dB; 43 to 46 GHz; MOCVD grown active layers; Q-band MESFET monolithic power amplifier; RF output power; electron beam defined gates; small-signal gain; three stage amplifier; Frequency; Gallium arsenide; High power amplifiers; MESFETs; Microwave FETs; Microwave amplifiers; Power amplifiers; Power generation; Pulse amplifiers; Radiofrequency amplifiers;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172661
