Title :
Yield determination and design optimization of GaAs MESFETs using a physical simulator
Author :
Bilbro, G.L. ; Stoneking, D.E. ; Trew, R.J.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
The authors have enhanced TEFLON, the physics based large-signal GaAs MESFET model, to predict yield of a GaAs MESFET design before fabrication. Device acceptance criteria include large-signal RF operating characteristics such as maximum power added efficiency and power out at 1 dB gain compression. SUPREM 3.5 has been incorporated into TEFLON so that optimizable parameters include processing specifications for material deposition, ion implantation, and annealing as well as physical parameters such as device geometry. The authors have incorporated Monte Carlo techniques to statistically treat disturbances of the physical and processing parameters. Finally they have integrated the yield estimation modules with an optimizer so a design can be centered for maximum yield in the presence of process disturbances.<>
Keywords :
CAD; III-V semiconductors; Monte Carlo methods; Schottky gate field effect transistors; electronic engineering computing; gallium arsenide; semiconductor device models; GaAs; GaAs MESFET; Monte Carlo techniques; SUPREM 3.5; TEFLON; annealing; design optimization; device geometry; ion implantation; large signal model; large-signal RF operating characteristics; material deposition; maximum power added efficiency; physical simulator; power out; processing parameters; yield; Annealing; Design optimization; Fabrication; Gain; Gallium arsenide; Ion implantation; MESFETs; Physics; Predictive models; Radio frequency;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location :
Monterey, CA, USA
Print_ISBN :
0-7803-0196-X
DOI :
10.1109/GAAS.1991.172664
