Title :
Structural and optical properties of ZnTe thin films
Author :
Potlog, T. ; Maticiuc, N. ; Mirzac, A. ; Dumitriu, P. ; Scortescu, D.
Author_Institution :
Phys. Dept., Moldova State Univ., Chisinau, Moldova
Abstract :
Thin films of ZnTe have been prepared by close spaced sublimation technique. The deposited films have been characterized by using optical absorption, X-ray diffraction (XRD) and scanning electron microscopy (SEM). Structural investigations performed by X-ray diffraction technique showed that studied samples are polycrystalline and have a cubic (zinc blende) structure. XRD patterns have been used to determine the microstructural parameters (crystallite size, lattice parameter) of investigated films. Surface morphology studies SEM shows that the grains are uniformly distributed over the entire surface of the substrate. Optical properties of ZnTe films were studied extensively in the range of incident photon energy (0.5-4.0) eV. In the studied ZnTe films the direct transitions take place.
Keywords :
II-VI semiconductors; X-ray diffraction; crystallites; electrodeposition; lattice constants; scanning electron microscopy; semiconductor growth; semiconductor thin films; sublimation; surface morphology; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; SEM; X-ray diffraction; XRD; ZnTe; close spaced sublimation technique; crystallite size; cubic zinc blende structure; electrodeposition; electron volt energy 0.5 eV to 4.0 eV; incident photon energy; lattice parameter; microstructural parameters; optical absorption; optical properties; polycrystalline samples; scanning electron microscopy; structural properties; surface morphology; thin films; ultraviolet-visible spectra; Absorption; Optical diffraction; Optical films; Substrates; X-ray diffraction; X-ray scattering; ZnTe thin films; optical properties; structural properties;
Conference_Titel :
Semiconductor Conference (CAS), 2012 International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4673-0737-6
DOI :
10.1109/SMICND.2012.6400772