A 15-GHz monolithic low phase noise VCO using AlGaAs/GaAs HBT

Author

Yamauchi, Yoshiki ; Kamitsuna, Hideki ; Muraguchi, Masahiro ; Osafune, Kazuo

Author_Institution

NTT LSI Lab., Kanagawa, Japan

fYear

1991

fDate

20-23 Oct. 1991

Firstpage

259

Lastpage

262

Abstract

A 15-GHz monolithic low phase noise VCO (voltage controlled oscillator) IC constructed with an AlGaAs/GaAs HBT (heterojunction bipolar transistor) and a variable capacitance diode or varactor has been developed. The HBT and the varactor are constructed in an IC chip using a standard HBT IC process. A wide tuning range of about 600 MHz is obtained with varying control voltage from 0 to 4 V with an output power of more than -4 dBm. The low phase noise level for an offset frequency of 100 kHz of -85 dBc/Hz was measured at a frequency of 15.6 GHz.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave oscillators; variable-frequency oscillators; 0 to 4 V; 15.6 GHz; AlGaAs-GaAs; HBT; III-V semiconductors; MMIC; VCO; control voltage; offset frequency; output power; phase noise; tuning range; varactor; variable capacitance diode; Bipolar integrated circuits; Capacitance; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit noise; Monolithic integrated circuits; Phase noise; Varactors; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual

Conference_Location

Monterey, CA, USA

Print_ISBN

0-7803-0196-X

Type

conf

DOI

10.1109/GAAS.1991.172686

Filename

172686