DocumentCode
2800767
Title
A Ku-band high efficiency ion-implanted MMIC amplifier
Author
Le, H.M. ; Shih, Y.C. ; Chi, T. ; Fong, L. ; Kasel, K.
Author_Institution
Hughes Aircraft Co., Torrance, CA, USA
fYear
1991
fDate
20-23 Oct. 1991
Firstpage
335
Lastpage
338
Abstract
The design of a three-stage single-ended power amplifier is described. Of the MMIC (monolithic microwave integrated circuit) amplifiers reported, this MMIC amplifier has the highest power gain of 18 dB, the highest power added efficiency of 30 percent, and a broad bandwidth from 12 GHz to 16 GHz. Also described are other pertinent factors of the ion implantation process.<>
Keywords
MMIC; field effect integrated circuits; ion implantation; microwave amplifiers; power amplifiers; 12 to 16 GHz; 18 dB; 30 percent; 4 GHz; Ku-band; MMIC amplifier; SHF; high efficiency; ion-implanted; monolithic microwave integrated circuit; power added efficiency; single-ended power amplifier; three-stage; Aircraft; Bandwidth; FETs; Gain; High power amplifiers; Instruments; MESFETs; MMICs; Power amplifiers; Power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1991. Technical Digest 1991., 13th Annual
Conference_Location
Monterey, CA, USA
Print_ISBN
0-7803-0196-X
Type
conf
DOI
10.1109/GAAS.1991.172707
Filename
172707
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