• DocumentCode
    2800932
  • Title

    Piezoresistivity and electrical properties of poly-SiGe deposited at CMOS-compatible temperatures

  • Author

    Gonzalez, P. ; Haspeslagh, Luc ; Severi, Simone ; De Meyer, K. ; Witvrouw, Ann

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2010
  • fDate
    14-16 Sept. 2010
  • Firstpage
    476
  • Lastpage
    479
  • Abstract
    In this work the effect of doping concentration on the piezoresistive and electrical properties of poly-SiGe deposited at temperatures compatible with MEMS integration on top of CMOS are evaluated for the first time. With proper tuning of the boron content, a gauge factor around 14 and a TCR close to 0 are achievable. These results prove the potential of using poly-SiGe as a sensing layer for MEMS-above-CMOS applications.
  • Keywords
    Ge-Si alloys; doping profiles; piezoresistance; semiconductor materials; CMOS-compatible temperatures; MEMS integration; SiGe; doping concentration; electrical Properties; gauge factor; piezoresistivity; CMOS integrated circuits; Doping; Micromechanical devices; Piezoresistance; Sensors; Silicon; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
  • Conference_Location
    Sevilla
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-6658-0
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2010.5618171
  • Filename
    5618171
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2800932