On the modelling and optimisation of a novel Schottky based silicon rectifier

Author

van Hemert, T. ; Hueting, R.J.E. ; Rajasekharan, B. ; Salm, C. ; Schmitz, J.

Author_Institution

MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands

fYear

2010

fDate

14-16 Sept. 2010

Firstpage

460

Lastpage

463

Abstract

The charge plasma (CP) diode is a novel silicon rectifier using Schottky barriers, to circumvent the requirement for doping and related problems when small device dimensions are used. We present a model for the DC current voltage characteristics and verify this using device simulations. The model revealed an exponential dependence of the current on the metal work functions. And approximate linear dependence on the device geometry. The model is used to optimise the device performance. We show a factor 30 improvement in on/off current ratio (and hence rectification) toward 10E7 by appropriate sizing of the lateral device dimensions at given specific metal work functions.

Keywords

Schottky barriers; Schottky diodes; circuit optimisation; elemental semiconductors; plasma diodes; rectifiers; semiconductor device models; silicon; CP diode; DC current voltage characteristics; Schottky barriers; Schottky based silicon rectifier modelling; Si; approximate linear dependence; charge plasma diode; device geometry; device simulations; exponential dependence; metal work functions; on-off current ratio; Anodes; Cathodes; Charge carrier processes; Logic gates; Metals; Plasmas; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Conference_Location

Sevilla

ISSN

1930-8876

Print_ISBN

978-1-4244-6658-0

Type

conf

DOI

10.1109/ESSDERC.2010.5618177

Filename

5618177