3D analytical modelling of subthreshold characteristics in Pi-gate FinFET transistors

Author

Ritzenthaler, R. ; Lime, F. ; Iñiguez, B. ; Faynot, O. ; Cristoloveanu, S.

Author_Institution

Dept. of Electr. Eng., Rovira i Virgili Univ., Tarragona, Spain

fYear

2010

fDate

14-16 Sept. 2010

Firstpage

448

Lastpage

451

Abstract

A core model is developed in order to obtain, for the first time, analytical expressions of the subthreshold characteristics of advanced Pi-gate Multiple-gate FET transistors. Based on the resolution of the 3D Laplace´s equation, the interface coupling in the structure is accurately described. The short-channel characteristics (Subthreshold Slope and DIBL) are calculated and compared to experimental data with an excellent agreement. Additionally, it is shown that the proposed analytical equation for the 3D potential distribution can be used to determine the scalability of a wide range of Multiple-gate FET transistors.

Keywords

Laplace equations; MOSFET; electronic engineering computing; solid modelling; 3D Laplace equation; 3D analytical modelling; Pi-gate FinFET transistor; Pi-gate multiple-gate FET transistor; interface coupling; short-channel characteristics; subthreshold characteristics; subthreshold slope; Analytical models; Electric potential; Electrostatics; Logic gates; Silicon; Three dimensional displays; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Conference_Location

Sevilla

ISSN

1930-8876

Print_ISBN

978-1-4244-6658-0

Type

conf

DOI

10.1109/ESSDERC.2010.5618179

Filename

5618179