Optimization of the crystallization phase of Rare-Earth aluminates For blocking dielectric application in TANOS type flash memories

Author

Breuil, L. ; Adelmann, C. ; Van den Bosch, G. ; Cacciato, A. ; Zahid, M.B. ; Toledano-Luque, M. ; Suhane, A. ; Arreghini, A. ; Degraeve, R. ; Van Elshocht, S. ; Debusschere, I. ; Kittl, J. ; Jurczak, M. ; Van Houdt, J.

Author_Institution

Imec, Leuven, Belgium

fYear

2010

fDate

14-16 Sept. 2010

Firstpage

440

Lastpage

443

Abstract

Rare-Earth aluminates GdAlO and LuAlO are investigated as blocking dielectric for Al₂O₃ replacement in TANOS flash memory devices. Since the energy bandgap of aluminates strongly depends on their crystallization phase and it is the highest for orthorombic phase, both materials were engineered using templates to assure the highest Eg and k-value after crystallization. As a consequence, the memory stack performances are significantly improved. Compared to Al₂O₃ reference top dielectric, retention can be improved.

Keywords

aluminium compounds; crystallisation; dielectric materials; energy gap; flash memories; gadolinium compounds; lutetium compounds; optimisation; Al₂O₃; GdAlO; LuAlO; TANOS flash memory devices; blocking dielectric application; crystallization phase; energy band gap; memory stack performances; optimization; orthorombic phase; rare-earth aluminates; Aluminum oxide; Annealing; Dielectrics; High K dielectric materials; Logic gates; Programming;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European

Conference_Location

Sevilla

ISSN

1930-8876

Print_ISBN

978-1-4244-6658-0

Type

conf

DOI

10.1109/ESSDERC.2010.5618182

Filename

5618182