Ultra-fast, low-power integrated circuits in a scaled submicron HBT IC technology

Author

Hafizi, M. ; Jensen, J.F.

Author_Institution

Hughes Res. Labs., Malibu, CA, USA

fYear

1997

fDate

10-10 June 1997

Firstpage

87

Lastpage

90

Abstract

We have developed fast, dense, and low-power integrated circuits using a new scaled IC process. We have fabricated HBTs of 0.3 /spl mu/m/sup 2/ emitter and circuit metalization pitch of 4 /spl mu/m to reduce power and compact the chip size. Submicron HBTs exhibited f/sub T/ of over 160 GHz. We have demonstrated a number of circuits including a low-power comparator test chip clocked at 40 GHz.

Keywords

bipolar MIMIC; bipolar analogue integrated circuits; bipolar digital integrated circuits; bipolar integrated circuits; comparators (circuits); heterojunction bipolar transistors; integrated circuit technology; very high speed integrated circuits; 160 GHz; 4 micron; 40 GHz; InP; comparator test chip; low-power integrated circuits; scaled submicron HBT IC technology; ultra-fast ICs; Circuit testing; Clocks; Energy consumption; Etching; Geometry; Heterojunction bipolar transistors; Indium phosphide; Integrated circuit interconnections; Integrated circuit technology; Radiofrequency integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE

Conference_Location

Denver, CO, USA

Print_ISBN

0-7803-4063-9

Type

conf

DOI

10.1109/RFIC.1997.598748

Filename

598748