DocumentCode :
280199
Title :
Long wavelength InGaAsP/InGaAs and InGaAlAs/InGaAs MQW SCH lasers
Author :
Glew, R.W. ; Bhumbra, B. ; Greene, P.D. ; Henshall, G.D. ; Lowney, C.M. ; Whiteaway, J.E.A. ; Garrett, B.
Author_Institution :
STC Technol. Ltd., Harlow, UK
fYear :
1990
fDate :
33037
Firstpage :
42705
Lastpage :
42707
Abstract :
The authors describe the fabrication, performance and operation of stripe lasers in InGaAsP/InGaAs and InGaAlAs/InGaAs MQW structures. The notable feature of these quantum well lasers is that the output is polarized in the TE direction
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical waveguides; semiconductor junction lasers; semiconductor quantum wells; III-V semiconductors; InGaAlAs-InGaAs quantum wells; InGaAsP-InGaAs quantum wells; MQW SCH lasers; fabrication; long wavelength; operation; performance; quantum well lasers; ridge waveguide lasers; stripe lasers;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Applications of Quantum Wells in Optoelectronics, IEE Colloquium on
Conference_Location :
London
Type :
conf
Filename :
190390
Link To Document :
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