Re-entrant cavity heat sinks formed by anisotropic etching and silicon direct wafer bonding

Author

Goyal, Ajay ; Jaeger, Richard C. ; Bhavnani, Sushil H. ; Ellis, Charles D. ; Phadke, N.K. ; Azimi-Rashti, Mehdi ; Goodling, John S.

Author_Institution

Auburn Univ., AL, USA

fYear

1992

fDate

3-5 Feb 1992

Firstpage

25

Lastpage

29

Abstract

A silicon re-entrant cavity heat sink for enhanced liquid cooling of silicon multichip packages can be fabricated using a two-step anisotropic etching process, followed by silicon direct wafer bonding. The authors report a novel method of formation of such re-entrant cavities using silicon integrated circuit processing. Cavity mouth openings ranging from 500 to 7.5 μm have been batch fabricated with the two-step process. The re-entrant cavities suppress the temperature overshoot normally associated with the transition between the free convection and nucleate boiling regimes of liquid immersion cooling. It was observed that boiling occurs at heat fluxes below 2 W/cm²

Keywords

boiling; cooling; etching; heat sinks; integrated circuit technology; packaging; Si; Si direct wafer bonding; anisotropic etching; cavity mouth openings; enhanced liquid cooling; free convection; integrated circuit processing; liquid immersion cooling; multichip packages; nucleate boiling regimes; reentrant cavity heat sinks; temperature overshoot; Anisotropic magnetoresistance; Etching; Heat sinks; Immersion cooling; Integrated circuit packaging; Liquid cooling; Mouth; Silicon; Temperature; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management Symposium, 1992. SEMI-THERM VIII., Eighth Annual IEEE

Conference_Location

Austin, TX

Print_ISBN

0-7803-0500-0

Type

conf

DOI

10.1109/STHERM.1992.172863

Filename

172863