Feasible large signal MESFET equivalent circuit modelling

Derivation of electrical equivalent circuit model parameters for microwave field effect transistors operating in a nonlinear manner, may be accomplished by fitting simulated power spectral values to measured power spectra. The integrity of these models in the quality of overall active circuit prediction is paramount. Simulation of active device model behaviour may easily be achieved using an optimising, harmonic balance based, nonlinear circuit simulation computer program to adjust circuit parameters in order to achieve equivalence. Here an in house program is used to simulate circuit behaviour power spectral measurements on an NE71083 packaged MESFET transistor using a commercial test jig. Harmonic response simulations are compared with measured responses and the sensitivities of some model parameters are investigated