• DocumentCode
    2803306
  • Title

    Comparison of total dose responses on high resolution analog-to-digital converter technologies

  • Author

    Lee, C.I. ; John, A.H.

  • Author_Institution
    Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
  • fYear
    1997
  • fDate
    15-19 Sep 1997
  • Firstpage
    245
  • Lastpage
    250
  • Abstract
    Two different 12-bit analog-to-digital converter technologies, CMOS and BiCMOS, from Burr-Brown were compared for total dose responses. The BiCMOS converter appears to be a better candidate for space applications. CMOS devices showed larger degradation with both high dose rate (HDR) and low dose rate (LDR). An external voltage reference can be used for a radiation hardened process 12-bit converter from Analog Devices to maintain accuracy up to 1 Mrad(Si). DATEL´s 16-bit hybrid converter showed a low failure level with HDR
  • Keywords
    BiCMOS integrated circuits; CMOS integrated circuits; analogue-digital conversion; radiation hardening (electronics); space vehicle electronics; 1 Mrad; 12 bit; 16 bit; BiCMOS technology; Burr-Brown; CMOS technology; DATEL; external voltage reference; failure; high dose rate; high resolution analog-to-digital converter; hybrid converter; low dose rate; radiation hardening; space application; total dose response; Analog-digital conversion; BiCMOS integrated circuits; CMOS technology; Energy consumption; Laboratories; Propulsion; Radiation hardening; Space technology; Testing; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radiation and Its Effects on Components and Systems, 1997. RADECS 97. Fourth European Conference on
  • Conference_Location
    Cannes
  • Print_ISBN
    0-7803-4071-X
  • Type

    conf

  • DOI
    10.1109/RADECS.1997.698901
  • Filename
    698901