• DocumentCode
    2804766
  • Title

    TCAD based device architecture exploration towards half-terahertz silicon/germanium heterojunction bipolar technology

  • Author

    Sibaja-Hernandez, Arturo ; You, Shuzhen ; Van Huylenbroeck, Stefaan ; Venegas, Rafael ; Meyer, Kristin De ; Decoutere, Stefaan

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2010
  • fDate
    14-16 Sept. 2010
  • Firstpage
    246
  • Lastpage
    249
  • Abstract
    A 2D TCAD based device architecture exploration of SiGe:C NPN HBTs is presented. Two novel and one conventional self-aligned architecture are explored by process and device simulation. All these three architectures show their capability of achieving maximum oscillation frequency (fmax) of 500 GHz for scaled layout rules.
  • Keywords
    Ge-Si alloys; electromagnetic oscillations; heterojunction bipolar transistors; technology CAD (electronics); 2D TCAD based device architecture exploration; NPN HBT; SiGe:C; device simulation; frequency 500 GHz; half-terahertz heterojunction bipolar technology; maximum oscillation frequency; process simulation; self-aligned architecture; Capacitance; Heterojunction bipolar transistors; Performance evaluation; Radio frequency; Resistance; Semiconductor process modeling; Sensitivity;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
  • Conference_Location
    Sevilla
  • ISSN
    1930-8876
  • Print_ISBN
    978-1-4244-6658-0
  • Type

    conf

  • DOI
    10.1109/ESSDERC.2010.5618373
  • Filename
    5618373
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2804766