DocumentCode
2804829
Title
Multi-Subband Monte Carlo simulation of bulk MOSFETs for the 32nm-node and beyond
Author
Sampedro, Carlos ; Gámiz, Francisco ; Godoy, Andres ; Valín, Raul ; García-Loureiro, Antonio ; Rodríguez, Noel
Author_Institution
Dept. de Electron. y Tecnol. de Comput., Univ. de Granada, Granada, Spain
fYear
2010
fDate
14-16 Sept. 2010
Firstpage
238
Lastpage
241
Abstract
With the 32 nm node in mass production, simulations tools have to include quantum effects to correctly describe the behavior of the devices. The Multi-Subband Monte Carlo (MSB-MC) approach constitutes today´s most accurate method for the study of nanodevices with important applications to SOI devices. This work presents an MSB-MC study of 32 nm node and beyond bulk-nMOSFETs which still are the mainstream in the semiconductor industry.
Keywords
MOSFET; Monte Carlo methods; mass production; nanoelectronics; silicon-on-insulator; MSB-MC approach; SOI devices; bulk n-MOSFET; mass production; multisubband Monte Carlo simulation approach; nanodevices; quantum effects; semiconductor industry; size 32 nm; Computational modeling; Equations; Logic gates; MOSFETs; Mathematical model; Monte Carlo methods; Scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the European
Conference_Location
Sevilla
ISSN
1930-8876
Print_ISBN
978-1-4244-6658-0
Type
conf
DOI
10.1109/ESSDERC.2010.5618376
Filename
5618376
Link To Document