Analysis and modeling of pseudo-short-channel effects in ZnO-nanoparticle thin-film transistors

Due to the complex nature of the device physics in nanoparticle thin-film transistors (TFT), analytical models for the transistor characteristics are not available for advanced circuit design. The discrepancy between experimental data and the standard MOSFET equations has been neglected up to now, although there are several pseudo-short-channel effects obvious. In this paper, a simple but sufficient model is proposed, which represents the transistor characteristics of ZnO-nanoparticle TFTs by the introduction of two semi-empirical parameters. The model is demonstrated for integrated normally-on and normally-off devices in both linear and saturation regions.