DocumentCode
2805629
Title
Optimization of a SAW metal oxide semiconductor gas sensor
Author
Falconer, R.S. ; Lec, R. ; Vetelino, J.F. ; Xu, Z.
Author_Institution
Dept. of Electr. Eng., Maine Univ., Orono, ME, USA
fYear
1989
fDate
3-6 Oct 1989
Firstpage
585
Abstract
A simple theoretical model is applied to the problem of a SAW (surface acoustic wave) gas sensor which operates on the principle of conductivity changes within the sensing film. The model allows the prediction of SAW sensor response for a film of known conductivity variations, and the theoretical value of SAW velocity change agrees very well with that determined by experiment. The electroacoustic attenuation was also determined to be a significant factor in designing a SAW sensor. SAW sensor response can be optimized by designing the device such that the sheet conductivity of the film is within some region dependent upon the substrate material. A WO3 film could be designed to have a sheet conductivity within a specific range by tailoring parameters such as film thickness, doping, and heat treatment. A sensor consisting of an ST-cut SiO2 substrate and a WO3 film selectively sorbent to H2S was investigated. The SAW gas sensor is configured so that the film sheet conductivity and sensor response are measured simultaneously upon exposure to H2S. Specific operating conditions are obtained that optimized the SAW gas sensor response
Keywords
gas sensors; optimisation; surface acoustic wave devices; ultrasonic transducers; ultrasonic velocity measurement; H2S; SAW metal oxide semiconductor gas sensor; SiO2 substrate; WO3 film; conductivity changes; doping; electroacoustic attenuation; heat treatment; operating conditions; sensor response; sheet conductivity; substrate material; surface acoustic wave; thickness; velocity change; Acoustic sensors; Acoustic waves; Attenuation; Conductive films; Conductivity; Gas detectors; Predictive models; Semiconductor films; Substrates; Surface acoustic waves;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1989. Proceedings., IEEE 1989
Conference_Location
Montreal, Que.
Type
conf
DOI
10.1109/ULTSYM.1989.67051
Filename
67051
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