Title :
Piezoelectric photoacoustic study of AlxGa1-xAs epitaxial layer (x=0.22, 0.28, 0.5) grown on semi-insulating GaAs substrate
Author :
Fukuyama, A. ; Fukuhara, H. ; Akashi, Y. ; Yoshino, K. ; Maeda, K. ; Ikari, T.
Author_Institution :
Dept. of Mater. Sci., Miyazaki Univ., Japan
Abstract :
The piezoelectric photoacoustic (PPA) measurements of Alx Ga1-xAs (x=0.22, 0.28, 0.5) epitaxial layer grown on GaAs substrate were carried out in the temperature range from 297 to 80 K. In addition to the band-gap signal of GaAs substrate, the direct band-gap of AlGaAs were clearly observed in the higher photon-energy region. It was found that the temperature coefficient of the direct band-gap decreased with increasing Al mole fraction
Keywords :
III-V semiconductors; aluminium compounds; energy gap; gallium arsenide; photoacoustic effect; piezoelectric semiconductors; semiconductor epitaxial layers; 297 to 80 K; AlxGa1-xAs epitaxial layer; AlGaAs; GaAs; band-gap signal; direct band-gap; higher photon-energy region; increasing Al mole fraction; piezoelectric photoacoustics; semi-insulating GaAs substrate; temperature coefficient; Electrons; Epitaxial growth; Epitaxial layers; Etching; Gallium arsenide; Materials science and technology; Photonic band gap; Spectroscopy; Substrates; Temperature;
Conference_Titel :
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location :
Sendai
Print_ISBN :
0-7803-4095-7
DOI :
10.1109/ULTSYM.1998.765062
