DocumentCode
2805771
Title
Photoacoustic spectra for porous Si analyzed by the scattering model with reflection
Author
Kawahara, T. ; Mihara, M. ; Morimoto, J. ; Miyakawa, T.
Author_Institution
Dept. of Mater. Sci. & Eng., Nat. Defense Acad., Yokosuka, Japan
Volume
2
fYear
1998
fDate
1998
Firstpage
1243
Abstract
The photoacoustic (PA) spectra are measured on Porous silicon (PS) which is a light emitting Si. PS has many pores and is constructed from the PS layer and the Si substrate. We analyze the PA spectra by the scattering model with the reflection at the interface between the PS layer and the substrate. The scattering effects, the reflection one and the effects of the layer structure on the PA signal are discussed. We compare this model to real PS samples. Two layer structure fits well with the wavelength dependence of PA spectra for the thin PS films
Keywords
elemental semiconductors; photoacoustic spectra; porous semiconductors; silicon; Si; layer structure; photoacoustic spectra; porous Si; scattering model with reflection; wavelength dependence; Acoustic measurements; Acoustic scattering; Light scattering; Optical devices; Optical films; Optical reflection; Optical scattering; Powders; Silicon; Spectroscopy;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium, 1998. Proceedings., 1998 IEEE
Conference_Location
Sendai
ISSN
1051-0117
Print_ISBN
0-7803-4095-7
Type
conf
DOI
10.1109/ULTSYM.1998.765064
Filename
765064
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