DocumentCode
28080
Title
Random-telegraph-signal noise in AlGaN/GaN MIS-HEMT on silicon
Author
Yihu Li ; Goh Wang Ling ; Geok Ing Ng ; Zhi Hong Liu ; Yong-Zhong Xiong ; Lo, Pechin
Author_Institution
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore
Volume
49
Issue
2
fYear
2013
fDate
January 17 2013
Firstpage
156
Lastpage
157
Abstract
The traps in an AlGaN/GaN metal-insulator-silicon-high-electron-mobility-transistor on silicon are investigated by analysing the random-telegraph-signal (RTS) noise in the drain current. Two different types of RTS noise due to the traps at the gate-oxide and AlGaN have been observed in this reported work. Through the analysis of the two RTS noises, the presences of the two trap types are verified and the trap locations have also been identified.
Keywords
III-V semiconductors; aluminium compounds; elemental semiconductors; gallium compounds; high electron mobility transistors; silicon; wide band gap semiconductors; AlGaN-GaN; MIS-HEMT on silicon; RTS noise; Si; gate-oxide; metal-insulator-silicon-high-electron-mobility-transistor on silicon; random-telegraph-signal noise; trap locations; trap types;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2012.4285
Filename
6420110
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