Vertical-cavity surface-emitting-lasers with 21% efficiency by metalorganic vapor phase epitaxy

Author

Lear, K.L. ; Schneider, R.P. ; Choquette, Kent D. ; Kilcoyne, S.P. ; Figiel, J.J. ; Zolper, J.C.

Author_Institution

Dept. of Photonics Res., Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1994

fDate

19-23 Sep 1994

Firstpage

181

Lastpage

182

Abstract

We have demonstrated vertical-cavity top-surface-emitting InGaAs QW lasers by metalorganic vapor phase epitaxy that set record cw performance marks of 21% power conversion efficiency, 1.47 V threshold voltage, 23 mW output power, and 3.7 mW single-mode output power. The enhanced laser performance relies on novel mirror designs and benefits of metalorganic vapor phase epitaxy

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; laser modes; optical fabrication; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; 1.47 V; 21 percent; 23 mW; 3.7 mW; InGaAs; InGaAs QW lasers; cw performance marks; enhanced laser performance; metalorganic vapor phase epitaxy; mirror designs; output power; power conversion efficiency; single-mode output power; threshold voltage; vertical-cavity surface-emitting-lasers; Epitaxial growth; Indium gallium arsenide; Mirrors; Optical design; Power conversion; Power generation; Power lasers; Surface emitting lasers; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Laser Conference, 1994., 14th IEEE International

Conference_Location

Maui, HI

Print_ISBN

0-7803-1754-8

Type

conf

DOI

10.1109/ISLC.1994.519324

Filename

519324