• DocumentCode
    2808619
  • Title

    Underfill selection strategy for low k, high lead/lead-free flip chip application

  • Author

    Lee, W.H. ; Jiang, D.S. ; Wang, Y.P. ; Hsiao, C.S.

  • fYear
    2007
  • fDate
    1-3 Oct. 2007
  • Firstpage
    338
  • Lastpage
    341
  • Abstract
    The trend of low k dielectrics for 45 nm silicon technologies is driving the development of new packaging processes and materials. Underfill material is the most critical material in the flip chip packages. The role of underfill is to protect solder joint and fragile low k chip dielectric layers. Generally, solder joints required stiff and rigid underfill but low k layers require more compliant properties. Hence, the underfill material and its associated processes play a big role in determining the reliability of the silicon in the package. New underfill materials have been recently developed to minimize the die stress and prevent low k layer delamination while concurrently reducing the strains on the solder joints. This paper discusses material issues encountered in the development of underfill materials for low k, high lead/lead free applications. The numerous of candidates spends lot of time on reliability testing. A selection strategy is used to characterize and to identify the few favorable underfills that have a high probability of successfully meet our reliability requirements. The process includes use of simulation and mechanical property test methods. Finally, the selection process identified few underfills for package qualification testing.
  • Keywords
    dielectric materials; flip-chip devices; solders; dielectrics; flip chip package; silicon technology; solder joint; underfill material; underfill selection strategy; Dielectric materials; Environmentally friendly manufacturing techniques; Flip chip; Lead; Materials reliability; Packaging; Protection; Silicon; Soldering; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microsystems, Packaging, Assembly and Circuits Technology, 2007. IMPACT 2007. International
  • Conference_Location
    Taipei
  • Print_ISBN
    978-1-4244-1636-3
  • Electronic_ISBN
    978-1-4244-1637-0
  • Type

    conf

  • DOI
    10.1109/IMPACT.2007.4433631
  • Filename
    4433631