FET microwave detectors

Author

Luglio, Juan ; Ishii, T. Kolyu

Author_Institution

Dept. of Electr. & Comput. Eng., Marquette Univ., Milwaukee, WI, USA

fYear

1990

fDate

12-14 Aug 1990

Firstpage

601

Abstract

A novel high efficiency microwave detector using a FET (field effect transistor) MGF 1304A was designed, fabricated and tested at 8.6 GHz. Detected audio power over absorbed microwave power ratio of this FET detector was 135% due to the positive gain, compared with the 5% efficiency of the conventional 1N23C diode detector. The test results show that the FET detector designed and fabricated is more efficient for low level microwave signal detection than the conventional diode detector. The FET detector absorbs very little microwave power compared to the diode detector and is therefore more efficient within the definition employed. This increase in conversion efficiency comes at the expense of having to add DC power

Keywords

detector circuits; field effect transistor circuits; microwave detectors; solid-state microwave circuits; 135 percent; 8.6 GHz; DC power; FET detector; MGF 1304A; absorbed microwave power; conversion efficiency; detected audio power; low level microwave signal detection; microwave detector; positive gain; Envelope detectors; Frequency; Microwave FETs; Microwave amplifiers; Microwave circuits; Power amplifiers; Taylor series; Testing; Transconductance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1990., Proceedings of the 33rd Midwest Symposium on

Conference_Location

Calgary, Alta.

Print_ISBN

0-7803-0081-5

Type

conf

DOI

10.1109/MWSCAS.1990.140790

Filename

140790