• DocumentCode
    2809803
  • Title

    First-principle calculation of Ge-doped anatase TiO2

  • Author

    Chen, Hua ; Zhang, Xuefeng

  • Author_Institution
    Sch. of Math., Phys. & Biol. Eng., Inner Mongolia Univ. of Sci. & Technol., Baotou, China
  • fYear
    2011
  • fDate
    15-17 July 2011
  • Firstpage
    4084
  • Lastpage
    4087
  • Abstract
    Band structure of the Ge-doped anatase TiO2 has been analyzed using the full potential-linearized augmented plane wave method (FP-LAPW). We investigated the band structure of the Ge-doped anatase TiO2 using generalized gradient approximation (GGA) and local density approximation (LDA). Compared our calculated optimized structure of the Ge doped with the pure anatase TiO2, it can be concluded that the volume of the Ge-doped anatase become reduced. The calculated band structure prefers an indirect transition between valence and conduction band of the Ge-doped anatase TiO2. The calculated results are in good agreement with the other calculated results.
  • Keywords
    APW calculations; conduction bands; density functional theory; germanium; gradient methods; semiconductor materials; titanium compounds; valence bands; TiO2:Ge; band structure; conduction band; first principle calculation; full potential-linearized augmented plane wave method; generalized gradient approximation; germanium doped anatase titanium dioxide; local density approximation; valence band; Approximation methods; Crystals; Lead; Physics; Three dimensional displays; Ge-doped; TiO2; ab initio; band structure;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Mechanic Automation and Control Engineering (MACE), 2011 Second International Conference on
  • Conference_Location
    Hohhot
  • Print_ISBN
    978-1-4244-9436-1
  • Type

    conf

  • DOI
    10.1109/MACE.2011.5987900
  • Filename
    5987900