Next generation 1200V trench CIGBT for high voltage applications

Author

Hong Yao Long ; Sweet, Mark R. ; De Souza, Maria Merlyne ; Narayanan, Ekkanath Madathil Sankara

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Sheffield, Sheffield, UK

fYear

2015

fDate

10-14 May 2015

Firstpage

33

Lastpage

36

Abstract

The characteristics of the next generation of 1200V Trench Clustered Insulated Gate Bipolar Transistor (TCIGBT) technology in Non-Punch Through technology are presented. The techniques applied to this novel power device are high density of MOS cells in both unique NMOS and ladder designs with fine pattern process. The device structure and process are optimized to provide the best trade-off between energy losses and ruggedness for industrial power applications.

Keywords

MOSFET; insulated gate bipolar transistors; MOS cell; energy losses; fine pattern process; high voltage applications; industrial power applications; next generation TCIGBT technology; nonpunch through technology; power device structure; ruggedness; trench clustered insulated gate bipolar transistor; unique NMOS design; unique ladder design; Insulated gate bipolar transistors; Logic gates; MOS devices; Power semiconductor devices; Switches; Temperature measurement; Thyristors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123382

Filename

7123382