Title :
High-temperature modulation dynamics of 1.3 μm AlxGa yIn1-x-yAs/InP compressive-strained multiple-quantum-well lasers
Author :
Zah, C.E. ; Wang, M.C. ; Bhat, R. ; Lee, T.P. ; Chuang, S.L. ; Wang, Z. ; Darby, D. ; Flanders, D. ; Hsieh, J.J.
Author_Institution :
Bellcore, Red Bank, NJ, USA
Abstract :
Intrinsic small-signal modulation responses of 1.3 μm Alx GayIn1-x-yAs/InP compressive-strained multiple-quantum-well lasers with three different barrier layers are investigated. For the lasers with a barrier bandgap wavelength of 1.01 μm, k factors are determined to be 0.24-0.25 ns, and thermal-limited 3-dB bandwidths of 19.5, 15, and 13.9 GHz are measured at 25, 65 and 85°C, respectively
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; optical modulation; quantum well lasers; spontaneous emission; waveguide lasers; 0.24 to 0.25 ns; 1.01 mum; 1.3 mum; 13.9 GHz; 15 GHz; 19.5 GHz; 25 degC; 65 degC; 85 degC; AlxGayIn1-x-yAs/InP compressive-strained MQW lasers; AlGaInAs-InP; barrier bandgap wavelength; barrier layers; high-temperature modulation dynamics; intrinsic small-signal modulation responses; k factors; ridge waveguide laser; thermal-limited 3-dB bandwidths; Artificial intelligence; Bandwidth; Carrier confinement; Diode lasers; Indium phosphide; Optical modulation; Photonic band gap; Quantum well lasers; Semiconductor lasers; Temperature sensors;
Conference_Titel :
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-1754-8
DOI :
10.1109/ISLC.1994.519340
