DocumentCode
2811406
Title
1.3 μm strained MQW-DFB lasers with extremely-low-intermodulation distortion for 1.9 GHz analog transmission
Author
Watanabe, H. ; Aoyagi, T. ; Takemoto, A. ; Takiguchi, T. ; Tada, H. ; Isshiki, K. ; Omura, E.
Author_Institution
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
fYear
1994
fDate
19-23 Sep 1994
Firstpage
217
Lastpage
218
Abstract
The third order intermodulation distortion as low as -88 dBc is achieved at high frequency of 1.9 GHz in 1.3 μm strained MQW-DFB InGaAsP lasers fabricated by all-MOCVD growth technique. High CNR over 80 dB is also realized
Keywords
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; intermodulation distortion; laser transitions; optical transmitters; quantum well lasers; semiconductor growth; vapour phase epitaxial growth; 1.3 mum; 1.9 GHz; 1.9 GHz analog transmission; InGaAsP; all-MOCVD growth technique; extremely-low-intermodulation distortion; high CNR; high frequency; strained MQW-DFB lasers; third order intermodulation distortion; Capacitive sensors; Electrons; Intermodulation distortion; Laser noise; Leakage current; Optical device fabrication; Optical distortion; Quantum well devices; Resonance; Resonant frequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Laser Conference, 1994., 14th IEEE International
Conference_Location
Maui, HI
Print_ISBN
0-7803-1754-8
Type
conf
DOI
10.1109/ISLC.1994.519341
Filename
519341
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