FEA analysis of classical defects in impulse storage capacitor

PD measurement is a good way to estimate the status of impulse storage capacitor. For deep research of PD, simulation of the electrical distribution in capacitor when it charged and discharge was processed. It brought forward four classical defect models for FEA (finite element analysis) in this paper. To different defect, the electrical distribution is definitely different. The electric potential change curve of inner defect during discharge time is also presented. Through analysis and calculation, the result proved that defects would do great effects to the capability of capacitor insulation. Especial, under discharge impulse, the defects did much more damage to capacitor insulation. Associating with the analysis of microcosmic phenomenon of materials, PD would do great function in future detection of storage capacitors.