A vertical current regulator diode with trench cathode based on double epitaxial layers for LED lighting

A vertical current regulator diode (CRD) with trench cathode based on double epitaxial layers is proposed and experimentally demonstrated. Double epitaxial layers structure is induced not only to achieve high breakdown voltage (V_B) but also to improve the saturation characteristics. Long-channel is realized by implanting boron after trench etching, which further improves the IV characteristics. Experimental results show that the proposed CRD presents well IV characteristics and a high V_B above 200 V. What´s more, the CRDs of different regulating current levels are achieved in the smallest device size of 470 × 470 μm² among all the reported CRDs with the same application voltage for LED lighting.