Title :
A 0.18μm SOI BCD technology for automotive application
Author :
Hao, Y. ; Sim, P.C. ; Toner, B. ; Frank, M. ; Ackermann, M. ; Tan, A. ; Kuniss, U. ; Kho, E. ; Doblaski, J. ; Hee, E.G. ; Liew, M. ; Hoelke, A. ; Wada, S. ; Oshima, T.
Author_Institution :
X-FAB, Kuching, Malaysia
Abstract :
This paper presents a new SOI BCD technology at the 0.18μm node to fulfill the requirements for smart power IC technology targeted for automotive application. Built on a 1.8V and 5.0V CMOS core, there are 40V and 60V rated N/Pch MOS, with 25mΩ.mm2 RonA/57V BVdss having been achieved for the 40V NMOS with excellent process stability. Depletion NMOS, LV&HV diodes, 5V zener diode, high gain BJT, excellent matching well resistor, capacitors, top thick Copper Metallization option, embedded memory (OTP, CEEPROM, etc.) are also offered on this comprehensive technology platform.
Keywords :
CMOS integrated circuits; automotive electrics; power integrated circuits; silicon-on-insulator; CMOS core; HV diodes; LV diodes; SOI BCD technology; automotive application; depletion NMOS; embedded memory; excellent matching well resistor; high gain BJT; size 0.18 mum; smart power IC technology; top thick copper metallization option; voltage 1.8 V; voltage 5 V; zener diode; Automotive applications; Electrostatic discharges; Implants; MOSFET; Performance evaluation; Semiconductor optical amplifiers;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123418
