Title :
Fully integrated SOI gate driver for control of 1200V IGBT switches in three-level-NPC topology
Author :
Vogler, Bastian ; Herzer, Reinhard ; Buetow, Sven
Author_Institution :
Semikron Elektron. Germany, Nuremberg, Germany
Abstract :
A novel gate driver for the control of 1200V IGBT switches in Three-Level Neutral Point Clamp (3L-NPC) half bridges based on high voltage silicon on insulator (SOI) technology is presented. The driver features a safety concept dedicated for 3L-NPC applications. The three dies of this multichip solution are assembled in a tiny cost effective IC package with excellent electrical and thermal properties. The measurement results demonstrate the driver performance at high voltage switching and power inverter operation. The new driver approach supports the market needs for cost efficient 3L gate driver circuits.
Keywords :
bridge circuits; clamps; driver circuits; invertors; power semiconductor switches; silicon-on-insulator; switching convertors; 3L-NPC half bridge; IC package; IGBT switch control; electrical property; high voltage silicon on insulator technology; high voltage switching inverter operation; integrated SOI gate driver circuit; multichip solution; power inverter operation; thermal property; three-level-NPC topology; voltage 1200 V; Bridge circuits; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Silicon-on-insulator; Switches; Topology; Gate Driver; HVIC; IGBT; NPC; SOI; Three-Level;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123457
