Suppression of switching loss dependence on charge imbalance of superjunction MOSFET

Author

Yamashita, Hiroaki ; Ura, Hideyuki ; Ono, Syotaro ; Nashiki, Masato ; Mii, Kenji ; Saito, Wataru ; Onodera, Jun ; Hokomoto, Yoshitaka

Author_Institution

Discrete Semicond. Div., Toshiba Corp., Nomi, Japan

fYear

2015

fDate

10-14 May 2015

Firstpage

405

Lastpage

408

Abstract

We discuss switching behavior of superjunction (SJ)-MOSFETs in terms of interaction between MOS gate structure and charge imbalance (CIB) of SJ structure. Resistive load switching behavior of SJ-MOSFET was analyzed by device simulation. CIB changes the gate voltage transient behavior between gate threshold voltage and gate plateau voltage via modification of the potential near the gate. We found key parameter which determines the effect of MOS structure and layout upon loss, and indicated robust MOS gate design and layout from the perspective of switching loss. Finally, we confirmed the conclusion by experiment.

Keywords

field effect transistor switches; losses; semiconductor junctions; CIB; MOS gate structure; SJ structure; SJ-MOSFET; charge imbalance; gate plateau voltage; gate threshold voltage; gate voltage transient behavior; resistive load switching behavior; robust MOS gate design; superjunction MOSFET; switching loss; switching loss dependence suppression; Electric potential; Layout; Logic gates; MOSFET; Switches; Switching loss; Transient analysis; superjunction; switching loss;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123475

Filename

7123475