Title :
Theoretical study of short channel effect in highly scaled GaN HEMTs
Author :
Haifeng Sun ; Lee, K.B. ; Li Yuan ; Weizhu Wang ; Selvaraj, S.L. ; Guo-Qiang Lo
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
2-D simulation of AlGaN/GaN HEMTs was carried out in order to investigate the mechanism of short-channel effect in highly scaled transistors. We demonstrate the impact of varying the barrier thickness as well as the gate lengths and show that high aspect ratio (gate length to barrier thickness) larger than 10 can effectively mitigate the short channel effect. We also show the influence of InGaN channel and the work-function of Schottky contacts on short channel effects.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; 2D simulation; AlGaN-GaN; InGaN; Schottky contact work-function; barrier thickness; highly scaled HEMT; highly scaled transistors; short channel effect; Radio frequency; AlGaN/GaN; Drain-Induced Barrier Lowering (DIBL); High Electron Mobility Transistor (HEMT); InGaN; Short-Channel Effect; TCAD Simulation;
Conference_Titel :
Radio-Frequency Integration Technology (RFIT), 2012 IEEE International Symposium on
Conference_Location :
Singapore
Print_ISBN :
978-1-4673-2303-1
DOI :
10.1109/RFIT.2012.6401661
