Elimination of bond-pad damage through structural reinforcement of intermetal dielectrics

Author

Saran, Mukul ; Cox, Ron ; Martin, Charlie ; Ryan, Greg ; Kudoh, T. ; Kanasugi, M. ; Hortaleza, Jed ; Ibnabdeljalil, M. Hamed ; Murtuza, Masood ; Capistrano, Don ; Roderos, Rodel ; Macaraeg, Richard

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1998

fDate

March 31 1998-April 2 1998

Firstpage

225

Lastpage

231

Abstract

A new bond failure mechanism related to the new, mechanically weak, low-k dielectrics in intermetal dielectric stacks is presented. Mechanical reinforcement of the dielectric stack through the use of metal grids is demonstrated to be effective to prevent this damage. Possible failure mechanisms are discussed.

Keywords

dielectric thin films; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit packaging; lead bonding; mechanical strength; permittivity; bond failure mechanism; bond-pad damage elimination; dielectric stack; failure mechanisms; intermetal dielectric stacks; intermetal dielectrics; mechanical reinforcement; mechanically weak low-k dielectrics; metal grid reinforcement; structural reinforcement; Aluminum; Bonding forces; Delamination; Dielectrics; Failure analysis; Instruments; Robustness; Testing; Tin; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International

Conference_Location

Reno, NV, USA

Print_ISBN

0-7803-4400-6

Type

conf

DOI

10.1109/RELPHY.1998.670555

Filename

670555