DocumentCode
2813652
Title
Influences of fan-in/fan-out structure and underfill fillet on TCT reliability of flip chip BGA
Author
Shimoe, Hiroshi ; Iijima, Toshitsune ; Iiyama, Taneko ; Oyama, Katsuhiko ; Taguchi, Hideo ; Hiruta, Yoichi
Author_Institution
Semicond. Adv. Packaging Eng. Dept., Toshiba Corp., Yokohama, Japan
fYear
1998
fDate
March 31 1998-April 2 1998
Firstpage
254
Lastpage
259
Abstract
The reliability of two types of flip chip ball grid array (BGA) was investigated using temperature cycling tests (TCT). It showed that the reliability of the fan-out structure was higher than that of the fan-in structure. The fan-in structure broke more easily at the die edge than the fan-out structure. The highest region of thermal stress on the fan-out structure package was different from that of the fan-in structure package. Therefore, the crack modes were also different. FEM analysis makes the difference of the maximum principal stress on the backside clear. The higher stress region of each structure influences the TCT reliability. The use of a ceramic substrate, as opposed to BT resin, improved the lifetime of the fan-in structure under thermal stress.
Keywords
encapsulation; finite element analysis; flip-chip devices; integrated circuit packaging; integrated circuit reliability; integrated circuit testing; stress analysis; surface mount technology; thermal stress cracking; thermal stresses; BT resin substrate; FEM analysis; TCT reliability; ceramic substrate; crack modes; die edge; fan-in structure; fan-in structure lifetime; fan-in structure package; fan-out structure; fan-out structure package; flip chip BGA; flip chip ball grid array; maximum principal stress; reliability; temperature cycling tests; thermal stress; underfill fillet; Ceramics; Electronic packaging thermal management; Flip chip; Reliability engineering; Resins; Semiconductor device packaging; Semiconductor device reliability; Semiconductor device testing; Temperature; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium Proceedings, 1998. 36th Annual. 1998 IEEE International
Conference_Location
Reno, NV, USA
Print_ISBN
0-7803-4400-6
Type
conf
DOI
10.1109/RELPHY.1998.670559
Filename
670559
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