Title :
AlGaAs/GaAs HBT receiver ICs for a 10 Gbps optical communication system
Author :
Akagi, Junko ; Kuriyama, Yasuhiko ; Morizuka, Kouhei ; Asaka, Masayuki ; Tsuda, Kunio ; Obara, Masao ; Yamakawa, Hideaki ; Ibe, Hiroyuki
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
Key component ICs for an optical communication system such as an equalizing amplifier a rectifier, and a limiting amplifier were fabricated with AlGaAs/GaAs HBTs. The equalizing amplifier with an amplitude detection circuit had an 11 GHz bandwidth, 30-dB maximum voltage gain and over 30-dB controllable gain width. The rectifier could extract 10-GHz signals, and the limiting amplifier had a 36-dB voltage gain at 10 GHz and an over 20-dB dynamic range with an under 10 degrees phase-shift deviation. These optical receiver ICs have a performance sufficient for 10-Gbit/s optical communication system.<>
Keywords :
III-V semiconductors; aluminium compounds; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; optical communication equipment; receivers; 10 GHz; 10 Gbit/s; 11 GHz; 30 to 36 dB; AlGaAs-GaAs; HBT receiver ICs; amplitude detection circuit; bandwidth; controllable gain width; dynamic range; equalizing amplifier; limiting amplifier; optical communication system; optical receiver ICs; phase-shift deviation; rectifier; semiconductors; voltage gain; Bandwidth; Circuits; Gallium arsenide; Heterojunction bipolar transistors; Optical amplifiers; Optical fiber communication; Optical receivers; Rectifiers; Semiconductor optical amplifiers; Voltage control;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual
Conference_Location :
New Orleans, LA, USA
DOI :
10.1109/GAAS.1990.175444
