Current-Voltage Characteristics of Detector Structures Based on Epitaxial Gallium Arsenide

Author

Kalygina, V.M. ; Ponomarev, I.V. ; Slunko, E.S.

Author_Institution

Tomsk State Univ., Tomsk

fYear

2007

fDate

20-21 April 2007

Firstpage

207

Lastpage

210

Abstract

Results of investigation of temperature dependence of current-voltage characteristics (VAC) of detector structures based on epitaxial layers GaAs:Cr is reported. It was determined that forward branches of VAC determined by unipolar injection which changed by the double injection to the semiconductor. Reverse branches, down to the bias of 5 V, determined by generation current. In the range of high reverse voltage current caused by the ionization by collision of the deep levels created by chromium atoms.

Keywords

III-V semiconductors; chromium; deep levels; gallium arsenide; p-i-n photodiodes; photodetectors; semiconductor epitaxial layers; GaAs:Cr; current-voltage characteristics; deep levels; detector structures; epitaxial gallium arsenide; p⁺-i-n⁺ structures; radiation detectors; temperature dependence; unipolar injection; Chromium; Communication system control; Current-voltage characteristics; Electrical resistance measurement; Gallium arsenide; Impurities; Light emitting diodes; Radiation detectors; Temperature dependence; Voltage; GaAs; chromium; current-voltage characteristics;

fLanguage

English

Publisher

ieee

Conference_Titel

Control and Communications, 2007. SIBCON '07. Siberian Conference on

Conference_Location

Tomsk

Print_ISBN

1-4244-0346-4

Type

conf

DOI

10.1109/SIBCON.2007.371326

Filename

4233305