An improved MMIC design system composed of an electron beam direct drawing, microwave simulation and on-wafer measurement subsystems

Author

Yamada, T. ; Nishida, M. ; Sawai, T. ; Harada, Y. ; Nakakado, T.

Author_Institution

Sanyo Electric Co. Ltd., Osaka, Japan

fYear

1990

fDate

7-10 Oct. 1990

Firstpage

77

Lastpage

80

Abstract

An improved design system is introduced to develop not only new monolithic microwave ICs (MMICs) and their element devices, but also their accurate simulation models. It is composed of electron beam (EB) direct drawing, microwave simulation, and on-wafer measurement subsystems connected through the LAN. Successful preliminary applications of this system are demonstrated for improved T-shaped 0.1 mu m length gate formation and an amplifier designed using this improved simulation model. The system and its advantages are described.<>

Keywords

MMIC; circuit layout CAD; electron beam lithography; field effect integrated circuits; microwave amplifiers; 100 nm; LAN; MMIC design system; T-shaped 0.1 mu m length gate formation; amplifier; electron beam direct drawing; electron direct write; microwave simulation; monolithic microwave ICs; on-wafer measurement subsystems; Circuit simulation; Computational modeling; Electrodes; Electron beams; Gallium arsenide; Instruments; MMICs; Noise measurement; Semiconductor device modeling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual

Conference_Location

New Orleans, LA, USA

Type

conf

DOI

10.1109/GAAS.1990.175453

Filename

175453