Piezoelectric aluminum nitride resonator for reference oscillator

Author

Verjus, F. ; Fougerat, A. ; Rousseard, J. ; Le Cornec, F. ; Loiseau, S. ; Valbin, L.

Author_Institution

NXP Semicond., Caen

fYear

2008

fDate

19-21 May 2008

Firstpage

233

Lastpage

236

Abstract

This paper investigates in plane extensional piezoelectric resonator operating at MHz frequency. Thin film elongation acoustic resonator (TFEAR) consists of piezoelectric aluminum nitride thin film sandwiched between two aluminum electrodes. Resonators have been manufactured on silicon wafers; AlN and Al thin films have been deposited using standard DC magnetron sputtering technology. Resonance frequencies between 2 and 80 MHz have been measured for 10 - 50 mum width and 50 - 1000 mum length resonators. Q factor up to 3000 has been measured in air and thermal measurement has been done for some TFEAR.

Keywords

Q-factor measurement; acoustic resonators; aluminium compounds; crystal oscillators; silicon; sputtering; thin film devices; Al-AlN-Al; Q factor; Si; aluminum electrodes; frequency 2 MHz to 80 MHz; piezoelectric resonator; reference oscillator; silicon wafer; size 10 mum to 50 mum; size 50 mum to 1000 mum; standard DC magnetron sputtering technology; thermal measurement; thin film elongation acoustic resonator; Aluminum nitride; Electrodes; Frequency; Manufacturing; Oscillators; Piezoelectric films; Q measurement; Semiconductor thin films; Silicon; Sputtering;

fLanguage

English

Publisher

ieee

Conference_Titel

Frequency Control Symposium, 2008 IEEE International

Conference_Location

Honolulu, HI

ISSN

1075-6787

Print_ISBN

978-1-4244-1794-0

Electronic_ISBN

1075-6787

Type

conf

DOI

10.1109/FREQ.2008.4622996

Filename

4622996