DocumentCode :
2816245
Title :
First principles band structure calculation and electron transport for strained InAs
Author :
Hori, Yasuko ; Miyamoto, Yoshiyuki ; Ando, Yuji ; Sugino, Osamu
Author_Institution :
Kansai Electron. Res. Labs., NEC Corp., Shiga, Japan
fYear :
1998
fDate :
11-15 May 1998
Firstpage :
104
Lastpage :
107
Abstract :
We have theoretically investigated the band structure of InGaAs and strained InAs on (001) InP by employing the pseudopotentials and the local density approximation. We have extracted band parameters and analyzed electron transport by the Monte Carlo method. 26% higher mobility and 16% higher peak velocity are predicted in strained InAs in comparison with unstrained In0.53Ga0.47As
Keywords :
III-V semiconductors; Monte Carlo methods; band structure; carrier mobility; density functional theory; electrical conductivity; gallium arsenide; indium compounds; pseudopotential methods; (001) InP; In0.53Ga0.47As; InAs; InGaAs; InP; Monte Carlo method; band parameters; electron transport; first principles band structure calculation; local density approximation; mobility; pseudopotential; strained InAs; velocity; Capacitive sensors; Effective mass; Electrons; Indium gallium arsenide; Indium phosphide; Intrusion detection; Laboratories; Lattices; Sampling methods; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1998 International Conference on
Conference_Location :
Tsukuba
ISSN :
1092-8669
Print_ISBN :
0-7803-4220-8
Type :
conf
DOI :
10.1109/ICIPRM.1998.712412
Filename :
712412
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2816245
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